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Mosfet Pinout Diagram
| Номер произв | SCH1416 | ||||
| Описание | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | ||||
| Производители | Sanyo Semicon Device | ||||
| логотип | |||||
1Page
Ordering number : ENN7725 SCH1416 • Low ON-resistance. • 4V drive. General-Purpose Switching Device Applications Absolute Maximum Ratings at Ta=25°C Drain-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Storage Temperature VDSS ID PD Tstg PW≤10µs, duty cycle≤1% Ratings ±20 8 150 Unit V A °C Electrical Characteristics at Ta=25°C Symbol Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Rise Time Fall Time V(BR)DSS IGSS yfs RDS(on)2 Coss td(on) td(off) ID=1mA, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1A ID=0.5A, VGS=4V VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. min 1.2 Ratings max V ±10 µA 1.4 S 310 440 mΩ 29 pF 6.5 ns 10.5 4.2 ns Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Continued from preceding page. Total Gate Charge Gate-to-Drain “Miller” Charge Symbol Qgs VSD VDS=10V, VGS=10V, ID=2A VDS=10V, VGS=10V, ID=2A Ratings Unit 0.7 nC 0.88 Package Dimensions 2221 1.6 654 0.15 0.5 Bottom View 2 : Drain 4 : Source 6 : Drain Switching Time Test Circuit 10V VIN D.C.≤1% VDD=10V RL=10Ω P.G SCH1416 ID -- VDS 1.6 1.2 0.4 3.0V 0 Drain-to-Source Voltage, VDS -- V IT06917 800 700 600 500 300 100 0 2 4 6 8 10 12 14 16 18 20 2.0 1.8 1.6 1.2 0.8 0.4 0 Gate-to-Source Voltage, VGS -- V IT06918 600 400 ID=0.5A, VGS=4V 200 100 --60 --40 --20 0 20 40 60 80 100 120 140 160 IT06920
3 yfs -- ID 7 5 2 0.1 5 2 0.001 2 3 2 Drain Current, ID -- A IT06921 VGS=10V 7 3 tf td(off) 7 td(on) 3 tr 1.0 23 VDS=10V 8 23 VGS -- Qg 6 4 2 0 Total Gate Charge, Qg -- nC 1.0 IT06923 IT06925 7 3 1.0 5 2 7 3 0.01 3 IF -- VSD 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Ciss, Coss, Crss -- VDS 100 7 3 Coss 2 0 2 4 6 8 10 12 14 16 ASO 7 IDP=8A 2 1ms IT06924 1.0 5 2 7 area is limited by RDS(on). 3 Ta=25°C 0.01 Mounted on a ceramic board (900mm2!0.8mm) Drain-to-Source Voltage, VDS -- V IT06926 0.6 0.2 0 Ambient Temperature, Ta -- °C No.7725-3/4 | |||||
| Всего страниц | 4 Pages | ||||
| Скачать PDF | [ SCH1416.PDF Даташит ] | ||||
Back To Back Mosfet
Description
Bta16 600b How To Use
Good General Purpose Mosfets
All- TO-220 Style All- [GDS] Pinout | Polarity & Max Dissipating Power. W | Max. Voltage: Source-Drain & Gain-Source | Max.Drain Current & Max. Operating Temperature. | Rds(on) Max. ON-state D-S Resistance @10vG-S | . price |
| MTP12N10E | N-Ch 79w | 100v /±20V | 12A 175°C | 0.16Ω | 1.2$ or 5 for 4$ |
| IRF520 | N-Ch 60w | 100v /±20v | 10A 175°C | 0.11-0.27Ω | 1.2$ or 4 for 3$ |
| IRF640 | N-Ch 125w | 200v /±20v | 18A 150°C | 0.18Ω | 1.5$ or 5 for 6$ |
| IRF740 | N-ch 125w | 400v /±20v | 10A 150°C | 0.55Ω | 1.8$ or 4 for 5$ |
| IRFZ44N (ESD2kv) | N-Ch 110W | 55v /±10v | 49A 150°C | 0.022Ω | 1.5$ or 5 for 6$ |
| BUZ91 (hi-v) | N-Ch 150w | 600v /±20v | 8.5A 150°C | 0.8Ω | 2$ or 4 for 6$ |
| IRF5210(compl.) | P-Ch 200w | -100v /±20V | 40A 175°C | 0.06Ω | 2.2$ or 4 for 6$ |
| IRF3710(compl.) | N-Ch 200w | 100v /±20V | 57A 175°C | 0.023Ω | 2$ or 4 for 6$ |
| IRF9540 | P-Ch 150w | -100v /±10V | 19A 175°C | 0.2Ω | 2.5$ or 3 for 6$ |